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ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MW6S010MR1 MW6S010GMR1
TYPICAL CHARACTERISTICS ? 900 MHz
ACPR (dBc)
0?60
Pout, OUTPUT POWER (WATTS) AVG.
50
?10
40
?20
30
?30
20
?40
10
?50
0.1 1 10
Gps
ACPR
VDD= 28 Vdc
IDQ
= 125 mA
f = 945 MHz
Figure 8. Single-Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
100
15
20
0.1
0
50
TC
= ?30
C
25C
?30C
10
1
19
18
17
16
40
30
20
= 28 Vdc
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
G
ps
, POWER GAIN (dB)
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
16 V
IDQ
= 125 mA
f = 945 MHz
VDD
= 12 V
0122
46810
14
16
500
600
700
15
19
17
16
18
G
ps
, POWER GAIN (dB)
0
24
?25
5
20 0S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
16
?5
12 ?10
8?15
4
?20
1200
1100
1000
900
800
VDD
= 28 Vdc
Pout
= 10 W CW
IDQ
= 125 mA
S11 (dB)
S21 (dB)
85C
25C
85C
20 V
VDD
IDQ
= 125 mA
f = 945 MHz
24 V
28 V
32 V
ηD
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ηD
η
D
,
DRAIN EFFICIENCY (%)
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相关代理商/技术参数
MW6S010NR1
功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MW6S010NR1_09
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MW6S-12A
制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H
MW6S-12P
制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H
MW6S-5P
制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI
MW700
制造商:Datak Corporation 功能描述:
MW-75-03-G-D-130-075
制造商:Samtec Inc 功能描述:CONN BD STACKER HDR 150 POS 1MM SLDR ST SMD - Bulk
MW-75-03-G-D-193-065
制造商:Samtec Inc 功能描述:CONN BD STACKER HDR 150 POS 1MM SLDR ST SMD - Bulk
